I-MMBT2907ALT1G PNP 600mA 60V 300mW SOT-23(SOT-23-3) i-Bipolar Transistors – i-BJT RoHS Umfanekiso obonakalayo

I-MMBT2907ALT1G PNP 600mA 60V 300mW SOT-23(SOT-23-3) ii-Bipolar Transistors – BJT RoHS

Inkcazelo emfutshane:

Ingxenye ye-MMBT2907ALT1G
Umenzi: KWI Semiconductor
Iphakheji: SOT-23(SOT-23-3)
Inkcazo: I-Bipolar Transistors - BJT 600mA 60V PNP
Iphepha ledatha: Nceda uqhagamshelane nathi.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

IParameter yeMveliso

Uphawu	Ixabiso
Umenzi:	KWI Semiconductor
Udidi lweMveliso:	Ii-Bipolar Transistors-BJT
RoHS:	Iinkcukacha
Isimbo sokuNqamisa:	SMD/SMT
Umqulu / Ityala:	I-SOT-23-3
I-Transistor Polarity:	PNP
Ubumbeko:	Ungatshatanga
Umqokeleli- Emitter Voltage VCEO Max:	- 60 V
Umqokeleli- Isiseko seVoltage VCBO:	- 60 V
Emitter- Base Voltage VEBO:	5 V
Umqokeleli-Emitter Saturation Voltage:	- 1.6 V
Oyena Mqokeleli we-DC wangoku:	0.6 A
I-Pd - Ukutshatyalaliswa kwamandla:	225 mW
Fumana iMveliso yoBandwidth fT:	200 MHz
Ubuncinci bobushushu bokusebenza:	- 55 C
Obona bushushu bokusebenza:	+ 150 C
Uthotho:	I-MMBT2907AL
Ukupakishwa:	Sika iTape
Ukupakishwa:	MouseReel
Ukupakishwa:	I-Reel
Ubude:	0.94 mm
Ubude:	2.9 mm
Itekhnoloji:	Si
Ububanzi:	1.3 mm
Uphawu:	KWI Semiconductor
UMqokeleli oqhubekayo wangoku:	-0.6 A
DC Umqokeleli/Base Gain hfe Min:	75
Uhlobo lweMveliso:	Ii-BJTs - ii-Bipolar Transistors
Ubungakanani bePakethi yoMzi-mveliso:	3000
Uluhlu olungaphantsi:	Iitransistor
Ubunzima beyunithi:	0.001058 oz